JJAP Paper Award for Prof Shin Saito

Prof Shinichi Saito won the best paper award for his paper, entitled “Room-temperature direct band-gap electroluminescence from germanium (111)-fin light-emitting diodes”, in collaboration with Hitachi. They demonstrated the efficient light-emissions from Ge fin structures fabricated in silicon process. The paper can be found here:

http://iopscience.iop.org/article/10.7567/JJAP.56.032102/meta